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| PD- 95921 IRFD9110PBF Lead-Free www.irf.com 1 10/28/04 IRFD9110PBF 2 www.irf.com IRFD9110PBF www.irf.com 3 IRFD9110PBF 4 www.irf.com IRFD9110PBF www.irf.com 5 IRFD9110PBF 6 www.irf.com IRFD9110PBF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + + - * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig -14 For P Channel HEXFETS www.irf.com 7 IRFD9110PBF Hexdip Package Outline Dimensions are shown in millimeters (inches) Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE AS S EMBLY LOT CODE Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com |
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